MDPI has a special issue on TCAD and circuit simulation. Articles are published quickly after being received, and are available as open access. Authors can submit their work until October 29, 2022. https://www.mdpi.com/journal/applsci/special_issues/circuit_simulation Some of the papers published so far seem to offer a diverse range from simulation methods to device analysis.
Month: July 2022
On the History of the Numerical Methods Solving the Drift Diffusion Model
“On the History of the Numerical Methods Solving the Drift Diffusion Model”, by Bernd Meinerzhagen, is an excellent review article on the history of TCAD simulation methods. It discusses the importance of that Scharfetter-Gummel discretization and the use of box integration methods. https://doi.org/10.33079/jomm.20030403 In addition, it contains reference to many of the numerical methods employed… Continue reading On the History of the Numerical Methods Solving the Drift Diffusion Model
Journal of Computational Research
The “Journal of Computational Research” from Springer is a good journal to find recent articles on TCAD simulation topics. https://www.springer.com/journal/10825 With its hybrid publication model, it is possible to find some open access articles for download concerning recent advances in device simulation.
IEEE TED Special Issue on TCAD
The November 2021 issue of the IEEE Transactions on Electron Devices was a special issue on “New Simulation Methodologies for Next-Generation TCAD Tools”. It is available here: https://ieeexplore.ieee.org/xpl/tocresult.jsp?isnumber=9583611 It is nice to see that there is interest in ongoing research in this important aspect of semiconductor device research.
IEEE Preprint policy
The IEEE has taken a more open view of publishing research online before final publication. This includes posting unpublished manuscripts to their officially sponsored preprint server TechRxiv. In my recent experience, they encourage uploading your preprints, as part of the IEEE journal submission process. If your article is accepted, they do ask that you place… Continue reading IEEE Preprint policy
MOS-AK
The Modeling of Systems and Parameter Extraction Working Group (MOS-AK) is an organization holding meetings throughout the year, often colocated with other international research conferences. The topics of interest involve TCAD, compact modeling, and other EDA related areas of interest. Please visit their website at https://mos-ak.org for more information.
Stanford TCAD
An important resource for TCAD simulation research is the Stanford TCAD website at http://www-tcad.stanford.edu. Here you will find the source code for the PISCES device simulator, and the SUPREM process simulator. In addition, there are additional software programs available. Also archived here are informative dissertations concerning simulation methods and results.
Zenodo TCAD Community
Zenodo is a great website for archiving your research, in a way that is permanent and citable. An interesting feature are communities. “TCAD Simulation Methods and Results” so that this type of research can be curated on the site. When uploading your research, please feel free to tag this community, so that it can be… Continue reading Zenodo TCAD Community
Well Tempered MOSFET
The ‘”Well-Tempered” Bulk-Si NMOSFET Device Home Page’ from the Microsystems Technology Laboratory at MIT, is an important historical resource with TCAD simulation files for \(9\) to \(90 \mu m\). Unfortunately the website is no longer available on the MIT website. For historical purposes, it is archived here for anyone interested in using these files for… Continue reading Well Tempered MOSFET
SISPAD 2022
SISPAD 2022 will be held September 6-8, 2022 in Granada, Spain. The website is https://congresos.ugr.es/sispad2022/. The official website for all SISPAD conferences is https://sispad.info. This is the premier conference for semiconductor modeling and simulation. It is held every year around the world. Some of the topics for this years conference include (from the call for… Continue reading SISPAD 2022